Invention Grant
- Patent Title: Metal-oxide semiconductor (MOS) device with thick oxide
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Application No.: US15602915Application Date: 2017-05-23
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Publication No.: US10355134B2Publication Date: 2019-07-16
- Inventor: Narasimhulu Kanike , Qingqing Liang , Fabio Alessio Marino , Francesco Carobolante
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/522 ; H01L23/528 ; H01L29/66 ; H01L29/06 ; H01L27/08 ; H01L27/092 ; H01L29/93
Abstract:
Certain aspects of the present disclosure generally relate to a semiconductor device and techniques for fabricating a semiconductor device. In certain aspects, the semiconductor device includes a fin, a first non-insulative region disposed adjacent to a first side of the fin, and a second non-insulative region disposed adjacent to a second side of the fin. In certain aspects, the first non-insulative region and the second non-insulative region are separated by a trench, at least a portion of the trench being filled with a dielectric material disposed around the fin.
Public/Granted literature
- US20180342620A1 METAL-OXIDE SEMICONDUCTOR (MOS) DEVICE WITH THICK OXIDE Public/Granted day:2018-11-29
Information query
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