Invention Grant
- Patent Title: Synthesis and use of precursors for vapor deposition of tungsten containing thin films
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Application No.: US15729210Application Date: 2017-10-10
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Publication No.: US10358407B2Publication Date: 2019-07-23
- Inventor: Timo Hatanpää , Miika Mattinen , Mikko Ritala , Markku Leskelä
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: C07C49/92
- IPC: C07C49/92 ; C07C45/77 ; C23C16/30 ; C23C16/455
Abstract:
Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.
Public/Granted literature
- US20180099916A1 SYNTHESIS AND USE OF PRECURSORS FOR VAPOR DEPOSITION OF TUNGSTEN CONTAINING THIN FILMS Public/Granted day:2018-04-12
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