Invention Grant
- Patent Title: System and method for widening fin widths for small pitch FinFET devices
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Application No.: US15987009Application Date: 2018-05-23
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Publication No.: US10361126B2Publication Date: 2019-07-23
- Inventor: Kuo-Cheng Ching , Shi Ning Ju , Chih-Hao Wang , Ying-Keung Leung , Carlos H. Diaz
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L29/78 ; H01L21/762 ; H01L21/8234 ; H01L21/8238
Abstract:
A semiconductor layer is etched into a plurality of fin structures. A first nitridation process is performed to side surfaces of the fin structures. The first nitridation process forms a first oxynitride layer at the side surfaces of the fin structures. A liner oxide layer is formed on the first oxynitride layer. An isolation structure is formed around the fin structures after the forming of the liner oxide layer.
Public/Granted literature
- US20180269109A1 SYSTEM AND METHOD FOR WIDENING FIN WIDTHS FOR SMALL PITCH FINFET DEVICES Public/Granted day:2018-09-20
Information query
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