Invention Grant
- Patent Title: Wafer stacking for integrated circuit manufacturing
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Application No.: US15178709Application Date: 2016-06-10
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Publication No.: US10361140B2Publication Date: 2019-07-23
- Inventor: Qianwen Chen , Bing Dang , John Knickerbocker , Joana Sofia Branquinho Teresa Maria
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L25/00 ; H01L21/56 ; H01L23/00 ; H01L21/683 ; H01L25/065

Abstract:
A method of manufacturing integrated devices, and a stacked integrated device are disclosed. In an embodiment, the method comprises providing a substrate; mounting at least a first electronic component on the substrate; positioning a handle wafer above the first electronic component; attaching the first electronic component to the substrate via electrical connectors between the first electronic component and the substrate; and while attaching the first electronic component to the substrate, using the handle wafer to apply pressure, toward the substrate, to the first electronic component, to manage planarity of the first electronic component during the attaching. In an embodiment, a joining process is used to attach the first electronic component to the substrate via the electrical connectors. For example, thermal compression bonding may be used to attach the first electronic component to the substrate via the electrical connectors.
Public/Granted literature
- US20170358554A1 WAFER STACKING FOR INTEGRATED CIRCUIT MANUFACTURING Public/Granted day:2017-12-14
Information query
IPC分类: