Invention Grant
- Patent Title: Multigate metal-oxide semiconductor field effect transistor
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Application No.: US15611893Application Date: 2017-06-02
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Publication No.: US10361202B2Publication Date: 2019-07-23
- Inventor: Dong-chan Suh , Gi-gwan Park , Dong-woo Kim , Dong-suk Shin
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2016-0077545 20160621
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/092 ; H01L21/8238 ; H01L29/165 ; H01L29/04 ; H01L29/06

Abstract:
A semiconductor device includes a substrate including a first region and a second region, fin type active areas extending in a first direction away from the substrate in each of the first and second regions, a plurality of nanosheets extending parallel to an upper surface of the fin type active areas and being spaced apart from the upper surface of the fin type active areas, a gate extending over the fin type active areas in a second direction crossing the first direction, a gate dielectric layer interposed between the gate and each of the nanosheets, first source and drain regions included in the first region and second source and drain regions included in the second region, and insulating spacers interposed between the fin type active areas and the nanosheets, wherein air spacers are interposed between the insulating spacers and the first source and drain regions.
Public/Granted literature
- US20170365604A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-12-21
Information query
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