Invention Grant
- Patent Title: Ion beam device
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Application No.: US15514735Application Date: 2015-09-30
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Publication No.: US10366858B2Publication Date: 2019-07-30
- Inventor: Hiroyasu Shichi , Shinichi Matsubara , Yoshimi Kawanami , Hiroyuki Muto
- Applicant: Hitachi High-Technologies Corporation
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2014-207229 20141008
- International Application: PCT/JP2015/077780 WO 20150930
- International Announcement: WO2016/056446 WO 20160414
- Main IPC: H01J27/26
- IPC: H01J27/26 ; H01J37/08 ; H01J37/18 ; H01J37/28

Abstract:
In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.
Public/Granted literature
- US20170352517A1 Ion Beam Device Public/Granted day:2017-12-07
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