- 专利标题: Semiconductor device
-
申请号: US16115864申请日: 2018-08-29
-
公开(公告)号: US10367501B1公开(公告)日: 2019-07-30
- 发明人: Kentaro Ikeda
- 申请人: Kabushiki Kaisha Toshiba
- 申请人地址: JP Minato-ku
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Minato-ku
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2018-053571 20180320
- 主分类号: H03K17/687
- IPC分类号: H03K17/687 ; H01L29/78 ; H01L29/778 ; H01L29/20
摘要:
A semiconductor device according to an embodiment includes: a normally-off transistor having a first source, a first drain, and a first gate; a normally-on transistor having a second source electrically connected to the first drain, a second drain, and a second gate; a first capacitor having a first end and a second end, wherein the second end is electrically connected to the second gate; a first diode having a first anode electrically connected between the second end and the second gate, and a first cathode; a gate drive circuit electrically connected to the first gate and the first end; and a switch having a third end and a fourth end, wherein the third end is electrically connected to the first end.
信息查询
IPC分类: