- 专利标题： Thin film structure for micro-bolometer and method for fabricating the same
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申请号： US15926366申请日： 2018-03-20
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公开(公告)号： US10371571B2公开(公告)日： 2019-08-06
- 发明人: Seung Hyub Baek , Tae Hyeon Kil , Sanghyeon Kim , Won Jun Choi , Jeong Min Baik , Ki-Suk Lee
- 申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- 申请人地址： KR Seoul KR Ulsan
- 专利权人： Korea Institute of Science and Technology,UNIST (Ulsan National Institute of Science and Technology)
- 当前专利权人： Korea Institute of Science and Technology,UNIST (Ulsan National Institute of Science and Technology)
- 当前专利权人地址： KR Seoul KR Ulsan
- 代理机构： Rabin & Berdo, P.C.
- 优先权： KR10-2017-0062411 20170519
- 主分类号： G01J1/42
- IPC分类号： G01J1/42 ; G01J5/02 ; G01J5/04 ; G01J5/20 ; H01L21/02
摘要：
Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in tetragonal VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in tetragonal crystal phase formed on the oxide thin film with perovskite structure.
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