Invention Grant
- Patent Title: Thin film structure for micro-bolometer and method for fabricating the same
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Application No.: US15926366Application Date: 2018-03-20
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Publication No.: US10371571B2Publication Date: 2019-08-06
- Inventor: Seung Hyub Baek , Tae Hyeon Kil , Sanghyeon Kim , Won Jun Choi , Jeong Min Baik , Ki-Suk Lee
- Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Applicant Address: KR Seoul KR Ulsan
- Assignee: Korea Institute of Science and Technology,UNIST (Ulsan National Institute of Science and Technology)
- Current Assignee: Korea Institute of Science and Technology,UNIST (Ulsan National Institute of Science and Technology)
- Current Assignee Address: KR Seoul KR Ulsan
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2017-0062411 20170519
- Main IPC: G01J1/42
- IPC: G01J1/42 ; G01J5/02 ; G01J5/04 ; G01J5/20 ; H01L21/02
Abstract:
Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in tetragonal VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in tetragonal crystal phase formed on the oxide thin film with perovskite structure.
Public/Granted literature
- US20180335341A1 THIN FILM STRUCTURE FOR MICRO-BOLOMETER AND METHOD FOR FABRICATING THE SAME Public/Granted day:2018-11-22
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