Invention Grant
- Patent Title: Light emitting device and method of driving the light emitting device
-
Application No.: US16027892Application Date: 2018-07-05
-
Publication No.: US10373550B2Publication Date: 2019-08-06
- Inventor: Mitsuaki Osame , Aya Anzai , Yoshifumi Tanada , Keisuke Miyagawa , Satoshi Seo , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2002-054886 20020228
- Main IPC: G09G3/32
- IPC: G09G3/32 ; H01L33/00 ; G09G3/3233 ; G09G3/3258 ; G09G3/3266 ; G09G3/3291

Abstract:
A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.
Public/Granted literature
- US20180315370A1 Light Emitting Device and Method of Driving the Light Emitting Device Public/Granted day:2018-11-01
Information query
IPC分类: