-
公开(公告)号：US11189223B2
公开(公告)日：2021-11-30
申请号：US16881046
申请日：2020-05-22
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yu Yamazaki , Aya Anzai , Mitsuaki Osame
IPC: G09G3/3233 , G09G3/3266 , G09G3/20 , G09G3/3291 , F21V23/00 , F21V23/06 , H01L27/32 , H01L51/52 , H01L27/12 , H01L29/786
Abstract: A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.
-
公开(公告)号：US11063102B2
公开(公告)日：2021-07-13
申请号：US16358889
申请日：2019-03-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Makoto Udagawa , Masahiko Hayakawa , Jun Koyama , Mitsuaki Osame , Aya Anzai
IPC: H01L51/52 , H01L27/32 , H01L29/786 , H01L27/12
Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
-
公开(公告)号：US20190221628A1
公开(公告)日：2019-07-18
申请号：US16358904
申请日：2019-03-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Makoto Udagawa , Masahiko Hayakawa , Jun Koyama , Mitsuaki Osame , Aya Anzai
IPC: H01L27/32 , H01L27/12 , H01L29/786 , H01L51/52
Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
-
公开(公告)号：US09923127B2
公开(公告)日：2018-03-20
申请号：US14274143
申请日：2014-05-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kaoru Tsuchiya , Aya Anzai , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda
CPC classification number: H01L33/52 , H01L27/3244 , H01L27/3276 , H01L51/5246 , H01L2251/5323 , H01L2924/0002 , H01L2924/00
Abstract: An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention.
-
公开(公告)号：US09859353B2
公开(公告)日：2018-01-02
申请号：US15074255
申请日：2016-03-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Masahiko Hayakawa , Yoshifumi Tanada , Mitsuaki Osame , Aya Anzai , Ryota Fukumoto
IPC: H01L27/32 , H01L29/786 , G09G5/00 , G09G3/32 , H01L27/12 , G09G3/3233 , H01L27/02
CPC classification number: H01L27/3262 , G09G3/3233 , G09G2310/0251 , G09G2330/04 , H01L27/0248 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L27/3276 , H01L29/78675
Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.
-
Patent Agency Ranking
公开(公告)号：US20170213505A1
公开(公告)日：2017-07-27
申请号：US15482886
申请日：2017-04-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yu Yamazaki , Aya Anzai , Mitsuaki Osame
IPC: G09G3/3233 , G09G3/3266 , H01L27/32 , F21V23/00 , F21V23/06
CPC classification number: G09G3/3233 , F21V23/001 , F21V23/06 , G09G3/2022 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0814 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2310/0286 , G09G2310/0289 , G09G2310/0291 , G09G2320/0233 , G09G2330/021 , H01L27/1222 , H01L27/124 , H01L27/1251 , H01L27/322 , H01L27/3244 , H01L27/3262 , H01L27/3276 , H01L27/3295 , H01L29/78696 , H01L51/5221 , H01L51/5234 , H01L2251/5323
Abstract: A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.
-
公开(公告)号：US09577016B2
公开(公告)日：2017-02-21
申请号：US14730334
申请日：2015-06-04
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Makoto Udagawa , Masahiko Hayakawa , Jun Koyama , Mitsuaki Osame , Aya Anzai
IPC: H01L29/786 , H01L27/32 , H01L51/52 , H01L27/12
CPC classification number: H01L27/3262 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/3276 , H01L29/78675 , H01L29/78696 , H01L51/52
Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
Abstract translation: 本发明提供了一种具有特定长度的TFT的沟道长度，特别是比现有TFT长的几十到几百倍，特别是在栅极电压下变为导通状态 高于现有的和驾驶，并允许具有低通道电导gd。 根据本发明，不仅可以减小导通电流的简单分散，而且可以降低其归一化色散，并且除了各个TFT之间的色散的降低之外，OLED本身的分散和由于 可以降低OLED的劣化。
-
公开(公告)号：US20150144973A1
公开(公告)日：2015-05-28
申请号：US14609915
申请日：2015-01-30
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Aya Anzai , Mitsuaki Osame , Shunpei Yamazaki
IPC: H01L27/15
CPC classification number: H01L27/156 , G06F1/32 , G06F1/3203 , G06F1/3265 , G09G3/30 , G09G3/3208 , G09G2300/0439 , G09G2320/043 , H01L27/322 , H01L27/3267 , H04M2250/16 , H04W52/027 , Y02D10/153
Abstract: A display device having a first pixel electrode and a second pixel electrode whose areas are different from each other is provided. In the display device, the first pixel electrode and the second pixel electrode are electrically connected to a first transistor and a second transistor, respectively. Gates of the first transistor and the second transistor are electrically connected to each other. A potential is supplied to the first pixel electrode and the second pixel electrode through a wiring electrically connected to the first transistor and the second transistor.
Abstract translation: 提供具有第一像素电极和第二像素电极的显示装置，其区域彼此不同。 在显示装置中，第一像素电极和第二像素电极分别电连接到第一晶体管和第二晶体管。 第一晶体管和第二晶体管的栅极彼此电连接。 通过与第一晶体管和第二晶体管电连接的布线将电位提供给第一像素电极和第二像素电极。
-
公开(公告)号：US20140306224A1
公开(公告)日：2014-10-16
申请号：US14293369
申请日：2014-06-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Keitaro Imai , Aya Anzai , Yasuko Watanabe
CPC classification number: H01L27/3276 , H01L23/564 , H01L27/1222 , H01L27/3258 , H01L51/0005 , H01L51/5246 , H01L2924/0002 , H01L2924/00
Abstract: It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.
Abstract translation: 本发明的目的是提供一种防止水和/或氧的外部侵入并防止由于这些侵入物质引起的发光元件劣化的显示装置，并且提供一种制造方法，其包括用于制造显示器的简单制造步骤 设备。 本发明提供了一种在暴露的层间绝缘体的边缘上具有密封材料的显示装置，用于防止来自层间绝缘体的水和/或氧的侵入。 此外，本发明提供一种在暴露的层间绝缘体上具有阻挡体的显示装置，用于防止水和/或氧从层间绝缘体的侵入。 此外，在生产显示装置的制造步骤中应用液滴放电技术可以消除诸如曝光和显影的光刻步骤。 因此，提供了一种生产具有提高的产量的显示装置的方法。
-
公开(公告)号：US20140168196A1
公开(公告)日：2014-06-19
申请号：US14186600
申请日：2014-02-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Mitsuaki Osame , Aya Anzai , Yoshifumi Tanada , Keisuke Miyagawa , Satoshi Seo , Shunpei Yamazaki
IPC: G09G3/32
CPC classification number: G09G3/32 , G09G3/3233 , G09G3/3258 , G09G3/3266 , G09G3/3291 , G09G2300/043 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2310/0256 , G09G2310/027 , G09G2310/061 , G09G2310/08 , G09G2320/043 , G09G2320/045 , H01L33/0041
Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.
Abstract translation: 提供了通过抑制初始发光元件劣化而实现长寿命并能够进行高占空比驱动的发光器件。 通过形成反向偏置电源线（112）和反向偏压TFT（108），一次对一个EL元件（109）施加反向偏置。 因此，可以与图像信号的写入，发光，擦除等的操作同步地执行反向偏置应用。 因此，在保持与常规驱动方法相同的占空比的情况下，可以实现反向偏置应用。
-
-
-
-
-
-
-
-
-
Search Results
59
records
(took 0.028 seconds)
