Invention Grant
- Patent Title: Capacitor structure and fabrication method thereof
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Application No.: US15856084Application Date: 2017-12-28
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Publication No.: US10373957B2Publication Date: 2019-08-06
- Inventor: Feng-Yi Chang , Fu-Che Lee , Yi-Wang Zhan , Chieh-Te Chen
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201611252356 20161230
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/311 ; H01L21/02 ; H01L49/02
Abstract:
A capacitor structure includes a semiconductor substrate, a dielectric layer disposed on the semiconductor substrate, a storage node pad disposed in the dielectric layer, and a cylindrical lower electrode including a bottom portion recessed into the dielectric layer and in contact with the storage node pad. The bottom extends to a sidewall of the storage node pad.
Public/Granted literature
- US20180190657A1 CAPACITOR STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2018-07-05
Information query
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