Invention Grant
- Patent Title: Semiconductor device including contact structure
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Application No.: US15884504Application Date: 2018-01-31
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Publication No.: US10373961B2Publication Date: 2019-08-06
- Inventor: Chan-sic Yoon , Ki-seok Lee , Jung-hyun Kim , Je-min Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2017-0069074 20170602
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L27/108 ; H01L21/02 ; H01L21/768

Abstract:
A semiconductor device includes first wiring line patterns on a support layer, second wiring line patterns on the first wiring line patterns, and a multiple insulation pattern. The first wiring line patterns extend in a first direction and are spaced apart from each other in a second direction. The support layer includes first contact hole patterns between the first wiring line patterns that are spaced apart from each other in the first and second directions. The second wiring line patterns extend in the second direction perpendicular and are spaced apart from each other in the first direction. The multiple insulation pattern is on an upper surface of the support layer where the first contact hole patterns are not formed, arranged in a third direction perpendicular to the first direction and the second direction, and between the first wiring line patterns and the second wiring line patterns.
Public/Granted literature
- US20180350818A1 SEMICONDUCTOR DEVICE INCLUDING CONTACT STRUCTURE Public/Granted day:2018-12-06
Information query
IPC分类: