Invention Grant
- Patent Title: Method of forming metal contacts in the barrier layer of a group III-N HEMT
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Application No.: US15730853Application Date: 2017-10-12
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Publication No.: US10374057B2Publication Date: 2019-08-06
- Inventor: Yoshikazu Kondo , Shoji Wada , Hiroshi Yamasaki , Masahiro Iwamoto
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L29/201 ; H01L29/417 ; H01L29/45 ; H01L29/778 ; H01L29/66 ; H01L21/283 ; H01L29/20 ; H01L21/285
Abstract:
Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.
Public/Granted literature
- US20180033865A1 METHOD OF FORMING METAL CONTACTS IN THE BARRIER LAYER OF A GROUP III-N HEMT Public/Granted day:2018-02-01
Information query
IPC分类:
