Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US15706456Application Date: 2017-09-15
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Publication No.: US10374058B2Publication Date: 2019-08-06
- Inventor: Huan-Chieh Su , Zhi-Chang Lin , Ting-Hung Hsu , Jia-Ni Yu , Wei-Hao Wu , Chih-Hao Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L29/66 ; H01L27/088 ; H01L21/8234 ; H01L21/8238 ; H01L27/092
Abstract:
A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device includes forming a gate electrode layer in a gate trench; filling a recess in the gate electrode layer with a dielectric feature; and etching back the gate electrode layer from top end surfaces of the gate electrode layer while leaving a portion of the gate electrode layer under the dielectric feature.
Public/Granted literature
- US20190088762A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-03-21
Information query
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