Invention Grant
- Patent Title: Fin field effect transistor complementary metal oxide semiconductor with dual strained channels with solid phase doping
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Application No.: US15901447Application Date: 2018-02-21
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Publication No.: US10374064B2Publication Date: 2019-08-06
- Inventor: Kangguo Cheng , Ruilong Xie , Tenko Yamashita
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: International Business Machines Corporation,Globalfoundries, Inc.
- Current Assignee: International Business Machines Corporation,Globalfoundries, Inc.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/225
- IPC: H01L21/225 ; H01L29/66 ; H01L29/78 ; H01L21/8238 ; H01L27/092 ; H01L29/10 ; H01L29/165
Abstract:
A method of forming semiconductor devices that includes forming an oxide that is doped with a punch through dopant on a surface of a first semiconductor material having a first lattice dimension, and diffusing punch through dopant from the oxide into the semiconductor material to provide a punch through stop region. The oxide may then be removed. A second semiconductor material may be formed having a second lattice dimension on the first semiconductor material having the first lattice dimension. A difference between the first lattice dimension and the second lattice dimension forms a strain in the second semiconductor material. A gate structure and source and drain regions are formed on the second semiconductor material.
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