- 专利标题: Flexible bimodal sensor
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申请号: US15200293申请日: 2016-07-01
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公开(公告)号: US10374074B2公开(公告)日: 2019-08-06
- 发明人: Jihyun Bae , Nae-Eung Lee , Doil Kim , Thanh Tien Nguyen , Sunghoon Lee , Sanghun Jeon
- 申请人: SAMSUNG ELECTRONICS CO., LTD. , RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- 申请人地址: KR Suwon-si KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.,RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.,RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- 当前专利权人地址: KR Suwon-si KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2015-0094939 20150702
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; A61B5/0205 ; G01L9/00 ; G01K7/16 ; A61B5/024 ; A61B5/01 ; A61B5/021 ; A61B5/0245 ; A61B5/00
摘要:
A flexible bimodal sensor includes a gate electrode; a flexible substrate; a source electrode disposed on the flexible substrate; a drain electrode disposed on the flexible substrate apart from the source electrode; a channel layer disposed on the source electrode and the drain electrode and a portion of the flexible substrate between the source electrode and the drain electrode; and a gate insulating layer comprising a plurality of protrusions, the gate insulating layer being disposed on the channel layer and arranged between the channel layer and the gate electrode. The drain electrode outputs a current signal simultaneously indicating a temperature value and a pressure value sensed by the flexible bimodal sensor.
公开/授权文献
- US20170000358A1 FLEXIBLE BIMODAL SENSOR 公开/授权日:2017-01-05
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