The invention relates to an optoelectronic semiconductor chip (100), comprising an n-doped semiconductor layer (3), a p-doped semiconductor layer (5) and an active layer (4) arranged between the n-doped semiconductor layer (3) and the p-doped semiconductor layer (5), wherein the p-doped semiconductor layer (5) has an electrically conductive layer (7) arranged above it that is set up for making electrical contact with the p-doped semiconductor layer (5), wherein a lateral edge (2) is arranged laterally with respect to the n-doped semiconductor layer (3), the p-doped semiconductor layer (5) and the active layer (4), wherein the lateral edge (2) has at least two oblique edge portions, wherein a first edge portion (21) has at least areas arranged laterally with respect to the p-doped semiconductor layer (5), wherein a second lateral edge (22) has at least areas arranged laterally with respect to the n-doped semiconductor layer (3), wherein the angle of the first edge portion (21) in relation to the active layer (4) is shallower than the angle of the second edge portion (22), and wherein the electrically conductive layer (7) is at a lateral distance from the lateral edge (2).