- 专利标题: Differential amplifier with complementary unit structure
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申请号: US15855106申请日: 2017-12-27
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公开(公告)号: US10374554B2公开(公告)日: 2019-08-06
- 发明人: Rahul Karmaker , Bin Fan
- 申请人: QUALCOMM Incorporated
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理机构: Patterson & Sheridan, L.L.P.
- 主分类号: H03F3/45
- IPC分类号: H03F3/45 ; H03F1/02 ; H03F3/193
摘要:
Certain aspects of the present disclosure generally relate to a differential amplifier implemented using a complementary metal-oxide-semiconductor (CMOS) structure. The differential amplifier generally includes a first pair of transistors and a second pair of transistors coupled to the first pair of transistors. The gates of the first pair of transistors and gates of the second pair of transistors may be coupled to respective differential input nodes of the differential amplifier, and drains of the first pair of transistors and drains of the second pair of transistors may be coupled to respective differential output nodes of the differential amplifier. In certain aspects, the differential amplifier may include a biasing transistor having a drain coupled to a source of a transistor of the first pair of transistors and having a gate coupled to a common-mode feedback (CMFB) path of the differential amplifier.
公开/授权文献
- US20190199290A1 DIFFERENTIAL AMPLIFIER WITH COMPLEMENTARY UNIT STRUCTURE 公开/授权日:2019-06-27
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