Invention Grant
- Patent Title: Magnetron and magnetron sputtering device
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Application No.: US15113760Application Date: 2014-12-31
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Publication No.: US10381202B2Publication Date: 2019-08-13
- Inventor: Yujie Yang , Qiang Li , Guoqing Qiu , Zhimin Bai , Hougong Wang , Peijun Ding , Feng Lv
- Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
- Current Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201410032274 20140123
- International Application: PCT/CN2014/095758 WO 20141231
- International Announcement: WO2015/109927 WO 20150730
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/35 ; H01J37/34 ; C23C14/06 ; C23C14/14 ; H01J25/58

Abstract:
Embodiments of the invention provide a magnetron and a magnetron sputtering device, including an inner magnetic pole and an outer magnetic pole with opposite polarities. Both the inner magnetic pole and the outer magnetic pole comprise multiple spirals. The spirals of the outer magnetic pole surround the spirals of the inner magnetic pole, and a gap exists therebetween. In addition, the gap has different widths in different locations from a spiral center to an edge. Moreover, both the spirals of the outer magnetic pole and the spirals of the inner magnetic pole follow a polar equation: r=aθn+b(cos θ)m+c(tan θ)k+d, 0
Public/Granted literature
- US20170011894A1 MAGNETRON AND MAGNETRON SPUTTERING DEVICE Public/Granted day:2017-01-12
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