Invention Grant
- Patent Title: Semiconductor memory device and a manufacturing method thereof
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Application No.: US15856089Application Date: 2017-12-28
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Publication No.: US10381306B2Publication Date: 2019-08-13
- Inventor: Feng-Yi Chang , Shih-Fang Tzou , Fu-Che Lee , Chien-Cheng Tsai , Feng-Ming Huang
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu TW Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu TW Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201611258003 20161230
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/311 ; H01L27/108 ; H01L21/768 ; H01L23/522 ; H01L21/762 ; H01L29/06
Abstract:
A semiconductor memory device and a manufacturing method thereof are provided in the present invention. An under-cut structure is formed at an edge of a bit line contact opening in the process of forming the bit line contact opening for avoiding short problems caused by alignment shifting, and the process window of the process of forming the bit line contact opening may be improved accordingly.
Public/Granted literature
- US20180190586A1 SEMICONDUCTOR MEMORY DEVICE AND A MANUFACTURING METHOD THEREOF Public/Granted day:2018-07-05
Information query
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