A Field Effect Transistor (FET) capable of operating at high frequencies and includes comb-shaped source and drain electrodes. The comb-shaped drain electrode includes a plurality of thin comb-shape drain electrode layers at corresponding levels of the FET, each comb-shaped drain electrode layer including a plurality of drain electrode fingers having substantially the same width as the comb-shaped drain electrodes of each other layer. The comb-shaped source electrode includes a plurality of comb-shape source electrode layers at the corresponding levels, each comb-shaped drain electrode layer including a plurality of drain electrode fingers having substantially the same width as the comb-shaped source electrodes of each other layer. In addition, the inter-level retraction of adjacent drain electrode layers is the same or substantially the same. Similarly, the inter-level retraction of adjacent source electrode layers is the same or substantially the same.