Invention Grant
- Patent Title: Method of localized modification of the stresses in a substrate of the SOI type, in particular FD SOI type, and corresponding device
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Application No.: US15483299Application Date: 2017-04-10
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Publication No.: US10381478B2Publication Date: 2019-08-13
- Inventor: Frederic Boeuf , Olivier Weber
- Applicant: STMicroelectronics (Crolles 2) SAS , Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Crolles FR Paris
- Assignee: STMicroelectronics (Crolles 2) SAS,Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: STMicroelectronics (Crolles 2) SAS,Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Crolles FR Paris
- Agency: Crowe & Dunlevy
- Priority: FR1352535 20130321
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L29/04 ; H01L29/78 ; H01L21/02 ; H01L21/84 ; H01L27/12 ; H01L29/06 ; H01L21/762 ; H01L21/8238 ; H01L27/092 ; H01L29/16 ; H01L29/161
Abstract:
A substrate of the silicon on insulator type includes a semi-conducting film disposed on a buried insulating layer which is disposed on an unstressed silicon support substrate. The semi-conducting film includes a first film zone of tensile-stressed silicon and a second film zone of tensile-relaxed silicon. Openings through the buried insulating layer permit access to the unstressed silicon support substrate under the first and second film zones. An N channel transistor is formed from the first film zone and a P channel transistor is formed from the second film zone. The second film zone may comprise germanium enriched silicon forming a compressive-stressed region.
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