- Patent Title: Memory device, memory system, and operating method of memory device
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Application No.: US15850152Application Date: 2017-12-21
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Publication No.: US10388399B2Publication Date: 2019-08-20
- Inventor: Hye-jung Kwon , Kwang-il Park , Seung-jun Bae , Eun-sung Seo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2017-0074015 20170613
- Main IPC: G11C29/50
- IPC: G11C29/50 ; G11C5/14 ; G11C29/02 ; G11C29/04 ; G11C29/12 ; G11C29/52 ; G11C11/4074 ; G11C7/10

Abstract:
Memory devices and methods of operating the same are provided. The memory device including at least one internal circuit including a memory cell array and a peripheral circuit configured to drive the memory cell array, a monitor logic configured to monitor a current flowing into the at least one internal circuit and output a monitoring result, a detect logic configured to detect whether a leakage current flows in the at least one internal circuit based on the monitoring result, and output detected information regarding the leakage current, and diagnosis logic configured to diagnose an error in the at least one internal circuit based on the detected information.
Public/Granted literature
- US20180358109A1 MEMORY DEVICE, MEMORY SYSTEM, AND OPERATING METHOD OF MEMORY DEVICE Public/Granted day:2018-12-13
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