Invention Grant
- Patent Title: Integrated MEMS inertial sensing device
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Application No.: US15365851Application Date: 2016-11-30
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Publication No.: US10393526B2Publication Date: 2019-08-27
- Inventor: Ali J. Rastegar , Sanjay Bhandari
- Applicant: mCube Inc.
- Applicant Address: US CA San Jose
- Assignee: mCube, Inc.
- Current Assignee: mCube, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Ogawa P.C.
- Agent Richard T. Ogawa
- Main IPC: G01C19/5776
- IPC: G01C19/5776 ; G01C19/5712 ; G01C19/5783

Abstract:
An integrated MEMS inertial sensing device can include a MEMS inertial sensor with a drive loop configuration overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS inertial sensor. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. This incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.
Public/Granted literature
- US20170082438A1 INTEGRATED MEMS INERTIAL SENSING DEVICE Public/Granted day:2017-03-23
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