A resistive random access memory with superior area efficiency and higher reliability is provided. The resistive random access memory RRAM in the present invention includes a memory array, which includes a plurality of memory cells MC arranged in rows and columns. Each memory cell MC includes a variable resistive element and an access transistor. Gates of the access transistors in a column are connected to a word line WL. First electrodes of the variable resistive element in a row are connected to a bit line BL. Second electrodes of the variable resistive element in the row are connected to a source line SL. The source line SL includes a local source line 250, which extends in a direction that is orthogonal to the bit lines BL0/BL1/BL2/BL3 and is shared by the bit lines BL0/BL1/BL2/BL3.