Invention Grant
- Patent Title: High yield substrate assembly
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Application No.: US15449993Application Date: 2017-03-05
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Publication No.: US10396041B2Publication Date: 2019-08-27
- Inventor: Liang Wang , Ilyas Mohammed , Masud Beroz
- Applicant: Invensas Corporation
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L33/00 ; H01L21/683 ; H01L25/00 ; H01L27/02 ; H01L21/02 ; H01L23/544

Abstract:
High yield substrate assembly. In accordance with a first method embodiment, a plurality of piggyback substrates are attached to a carrier substrate. The edges of the plurality of the piggyback substrates are bonded to one another. The plurality of piggyback substrates are removed from the carrier substrate to form a substrate assembly. The substrate assembly is processed to produce a plurality of integrated circuit devices on the substrate assembly. The processing may use manufacturing equipment designed to process wafers larger than individual instances of the plurality of piggyback substrates.
Public/Granted literature
- US20170179046A1 HIGH YIELD SUBSTRATE ASSEMBLY Public/Granted day:2017-06-22
Information query
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