Invention Grant
- Patent Title: Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same
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Application No.: US16002070Application Date: 2018-06-07
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Publication No.: US10396078B2Publication Date: 2019-08-27
- Inventor: Judson R. Holt , Christopher D. Sheraw , Timothy J. McArdle , Matthew W. Stoker , Mira Park , George R. Mulfinger , Yinxiao Yang
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Francois Pagette
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8234 ; H01L21/8238 ; H01L21/84 ; H01L27/12

Abstract:
The disclosure is directed to an integrated circuit structure. The integrated circuit structure may include: a first device region laterally adjacent to a second device region over a substrate, the first device region including a first fin and the second device region including a second fin; a first source/drain epitaxial region substantially surrounding at least a portion of the first fin; a spacer substantially surrounding the first source/drain epitaxial region, the spacer including an opening in a lateral end portion of the spacer such that the lateral end portion of the spacer overhangs a lateral end portion of the first source/drain epitaxial region; and a liner conformally coating the lateral end portion of the first source/drain epitaxial region beneath the overhanging lateral end portion of the spacer, wherein the liner includes an electrical insulator.
Public/Granted literature
Information query
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