- 专利标题: Semiconductor device and method for producing semiconductor device
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申请号: US15858176申请日: 2017-12-29
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公开(公告)号: US10396197B2公开(公告)日: 2019-08-27
- 发明人: Fujio Masuoka , Hiroki Nakamura
- 申请人: Unisantis Electronics Singapore Pte. Ltd.
- 申请人地址: SG Singapore
- 专利权人: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
- 当前专利权人: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
- 当前专利权人地址: SG Singapore
- 代理机构: Brinks Gilson & Lione
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/66
摘要:
A semiconductor device includes a planar semiconductor layer formed on a substrate; a pillar-shaped semiconductor layer formed on the planar semiconductor layer; a gate insulating film surrounding the pillar-shaped semiconductor layer; a first metal surrounding the gate insulating film, the first metal being in contact with an upper portion of the planar semiconductor layer; a gate formed above the first metal so as to surround the gate insulating film, the gate being electrically insulated from the first metal; and a second metal formed above the gate so as to surround the gate insulating film, the second metal being electrically insulated from the gate, the second metal having an upper portion electrically connected to an upper portion of the pillar-shaped semiconductor layer.