- 专利标题: Circuit, system and method for thin-film transistor logic gates
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申请号: US15575197申请日: 2016-05-20
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公开(公告)号: US10396796B2公开(公告)日: 2019-08-27
- 发明人: Nikolaos Papadopoulos , Manoj Sachdev , William Wong
- 申请人: Nikolaos Papadopoulos , Manoj Sachdev , William Wong
- 代理机构: Gowling WLG (Canada) LLP
- 代理商 Neil W. Henderson
- 国际申请: PCT/CA2016/050572 WO 20160520
- 国际公布: WO2016/183687 WO 20161124
- 主分类号: H03K19/0944
- IPC分类号: H03K19/0944 ; H03K19/094 ; G09G3/20 ; H01L27/12 ; H01L29/786 ; H03K17/687 ; G09G3/34 ; H01L29/24
摘要:
A unipolar inverter circuit for thin-film transistor circuits including: a driving voltage input; an input signal; a base voltage input; a first stage having a first inverter circuit connected between the driving voltage input and the base voltage input and driven by an input signal; a capacitor coupled to the output of the first stage at a node A; and a second stage having: a second inverter circuit having a second stage load transistor and a second stage driving transistor, wherein a gate of the load transistor is connected to the capacitor at a node B; and a clamping transistor connected between the driving voltage and the node B for controlling a voltage, wherein the clamping transistor gate is connected to the driving voltage input; and an output, wherein the capacitor enables charge injection to the gate of the second stage load transistor to allow approximately full voltage swing at the output based on the input signal.
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