Invention Grant
- Patent Title: Method of manufacturing a semiconductor device and a semiconductor device
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Application No.: US15885359Application Date: 2018-01-31
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Publication No.: US10403550B2Publication Date: 2019-09-03
- Inventor: Hung-Li Chiang , Chao-Ching Cheng , Chih-Liang Chen , Tzu-Chiang Chen , Ta-Pen Guo , Yu-Lin Yang , I-Sheng Chen , Szu-Wei Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/8238 ; H01L27/092 ; H01L27/11 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/786

Abstract:
In a method, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial gate structure is formed over the fin structure. The first semiconductor layers are etched at a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, thereby forming a first source/drain space in which the second semiconductor layers are exposed. A dielectric layer is formed at the first source/drain space, thereby covering the exposed second semiconductor layers. The dielectric layer and part of the second semiconductor layers are etched, thereby forming a second source/drain space. A source/drain epitaxial layer is formed in the second source/drain space. At least one of the second semiconductor layers is in contact with the source/drain epitaxial layer, and at least one of the second semiconductor layers is separated from the source/drain epitaxial layer.
Public/Granted literature
- US20190067125A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE Public/Granted day:2019-02-28
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