Invention Grant
- Patent Title: Methods of manufacturing photomasks, methods of inspecting photomasks, and methods of manufacturing semiconductor devices
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Application No.: US15481204Application Date: 2017-04-06
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Publication No.: US10409169B2Publication Date: 2019-09-10
- Inventor: Jeong-Lim Kim , Jong-Doo Kim , Joong-Won Jeon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2016-0081113 20160628
- Main IPC: H01L21/31
- IPC: H01L21/31 ; G03F7/20 ; G03F1/26 ; H01L21/8234 ; H01L21/66 ; H01L29/66 ; G03F1/36 ; G03F1/44 ; G03F1/84
Abstract:
Methods of inspecting photomasks are provided. A method of inspecting a photomask includes electronically inspecting a first mask pattern in a mask region of the photomask and refraining from electronically inspecting a separate second mask pattern in the mask region of the photomask. The first mask pattern includes a geometric feature that corresponds to at least a portion of the second mask pattern. Moreover, the mask region is outside of a scribe lane region of the photomask. Related methods of manufacturing photomasks and methods of manufacturing semiconductor devices are also provided.
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