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公开(公告)号：US20240353747A1
公开(公告)日：2024-10-24
申请号：US18329584
申请日：2023-06-06
发明人： Pin Han Huang
CPC分类号： G03F1/36 , G03F1/80 , G03F7/70491 , G03F7/70616
摘要： A dissection method for optical proximity correction includes the following steps. An initial dissection is performed to define each side of a layout pattern as an original segment so as to form multiple original segments. It is determined whether an opposite side of a target side has an inside corner. A corner opposite dissection is performed to a target side to form multiple intermediate segments. It is judge which type of included angles between a target segment and each of its adjacent sides belongs to. A symmetrical dissection is performed according to the type of the included angles.
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公开(公告)号：US20240337920A1
公开(公告)日：2024-10-10
申请号：US18332773
申请日：2023-06-12
发明人： Kuei Yu Chien , Yung Ching Mai , Shin-Shing Yeh , Chia-Chi Lin , Jun-Cheng Lai
IPC分类号： G03F1/36
摘要： A design method of a photomask structure including the following steps is provided. A first layout pattern is provided. An assist pattern is added aside the first layout pattern. An optical proximity correction (OPC) is performed to convert the first layout pattern into a second layout pattern, wherein the assist pattern has an adjacent portion adjacent to the second layout pattern, a first distance between the adjacent portion and the second layout pattern is less than a safety distance, and the safety distance is a distance to prevent the assist pattern from being transferred to a photoresist layer during a lithography process. After the OPC is performed, the adjacent portion is shifted to increase the first distance to a second distance, wherein the second distance is greater than or equal to the safety distance.
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公开(公告)号：US20240295808A1
公开(公告)日：2024-09-05
申请号：US18297634
申请日：2023-04-09
发明人： Yi-Kai Lai
CPC分类号： G03F1/36 , G03F7/70191
摘要： A photomask includes a plurality of main patterns, a plurality of first sub-resolution assist feature patterns and a plurality of second sub-resolution assist feature patterns. The first sub-resolution assist feature patterns are located aside the main patterns. The second sub-resolution assist feature patterns are disposed between and connected to adjacent two of the first sub-resolution assist feature patterns.
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4.发明公开公开(公告)号：US20240264521A1
公开(公告)日：2024-08-08
申请号：US18575736
申请日：2021-12-28
发明人： Xiangang LUO , Weijie KONG , Xiangzhi LIU , Ge YIN , Changtao WANG
CPC分类号： G03F1/36 , G03F7/70441
摘要： A level set algorithm based reverse optical proximity effect correction method for super-resolution lithography. The method comprises: obtaining first mask data according to a target pattern, and constructing a level set function (S11); performing forward simulation, so as to obtain an electric field distribution on a photoresist and a first structural vector electric field distribution on a mask (S12); obtaining a photoresist pattern according to the electric field distribution on the photoresist, and calculating an imaging error between the photoresist pattern and the target pattern (S13); performing accompanying simulation, so as to obtain a second structural vector electric field distribution (S14); obtaining a level set gradient by means of performing calculation according to the first structural vector electric field distribution, the second structural vector electric field distribution and the imaging error (S15); and evolving the level set function by using the level set gradient, performing an update to obtain second mask data, and performing iterative calculation by using the second mask data until mask data meeting a preset condition is obtained, thereby completing reverse optical proximity effect correction (S16). Further provided are a surface plasmon super-resolution lithography method and a reverse optical proximity effect correction system.
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公开(公告)号：US20240256976A1
公开(公告)日：2024-08-01
申请号：US18565759
申请日：2022-06-10
发明人： Jun TAO , Yu CAO , Christopher Alan SPENCE
摘要： Described herein is a method of determining assist features for a mask pattern. The method includes obtaining (i) a target pattern comprising a plurality of target features, wherein each of the plurality of target features comprises a plurality of target edges, and (ii) a trained sequence-to-sequence machine leaning (ML) model (e.g., long short term memory, Gated Recurrent Units, etc.) configured to determine sub-resolution assist features (SRAFs) for the target pattern. For a target edge of the plurality of target edges, geometric information (e.g., length, width, distances between features, etc.) of a subset of target features surrounding the target edge is determined. Using the geometric information as input, the ML model generates SRAFs to be placed around the target edge.
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公开(公告)号：US20240248392A1
公开(公告)日：2024-07-25
申请号：US18626291
申请日：2024-04-03
申请人： Synopsys, Inc.
IPC分类号： G03F1/70 , G03F1/36 , G03F1/44 , G06F16/51 , G06F30/392 , G06F111/20
CPC分类号： G03F1/70 , G03F1/36 , G03F1/44 , G06F16/51 , G06F30/392 , G06F2111/20
摘要： A system generates a mask for a circuit design while enforcing symmetry and consistency across random areas of the mask. The system builds a mask solutions database mapping circuit patterns to mask patterns. The system uses the mask solutions database to replace circuit patterns of the circuit design with mask patterns. The system identifies properties in circuit patterns of the circuit design and enforces the same property in the corresponding mask patterns. Examples of properties enforced include symmetry within circuit patterns and similarity across circuit patterns. The system combines mask patterns in different regions of the circuit and resolves conflicts that occur when there are multiple masks within a region.
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公开(公告)号：US20240241436A1
公开(公告)日：2024-07-18
申请号：US18289384
申请日：2022-05-10
发明人： Xingyue PENG , Rafael C. HOWELL , Yen Wen LU , Xiaorui CHEN
摘要： Methods and systems for determining a mask rule check violation (MRC) associated with a mask feature using a detector having geometric properties corresponding to the MRC. The detector (e.g., elliptical shaped) is configured to include a curved portion to detect a curvature violation, include an enclosed area (e.g., a fully enclosed area or a partially enclosed area having an opening), include a predefined orientation axis configured to guide relative positioning of the detector with a mask feature, and include a length to detect a critical dimension violation. The orientation axis of the detector is aligned with a normal axis at a location on the mask feature. Based on the orientation axis aligned with the normal axis of the mask feature, an MRC violation is determined corresponding to a region of the mask feature that intersects the enclosed area.
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公开(公告)号：US12019969B2
公开(公告)日：2024-06-25
申请号：US17383153
申请日：2021-07-22
发明人： Jung-Chan Yang , Hui-Zhong Zhuang , Ting-Wei Chiang , Chi-Yu Lu
IPC分类号： G06F30/398 , G03F1/36 , G03F1/70 , G06F30/30 , G06F30/392 , G06F30/394 , G06F30/3953 , G06F119/18
CPC分类号： G06F30/398 , G03F1/36 , G03F1/70 , G06F30/30 , G06F30/392 , G06F30/394 , G06F30/3953 , G06F2119/18
摘要： An integrated circuit includes at least one source/drain (S/D) line extending in second direction in a cell of the integrated circuit. The integrated circuit further includes a conductive element extending in a first direction in the cell of the integrated circuit, the first direction being perpendicular to the second direction. The integrated circuit further includes a power rail extending over the conductive element, wherein the power rail includes a first power rail portion and a second power rail portion, and an inner edge of the first power rail portion is offset from an inner edge of the second power rail portion, wherein the first power rail portion has a first edge and the second power rail portion has a second edge on the same side as the first edge of the first power rail portion, and the first edge and the second edge are laterally separated.
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9.发明公开公开(公告)号：US20240201578A1
公开(公告)日：2024-06-20
申请号：US18449078
申请日：2023-08-14
发明人： Myoungho KANG , Yongah KIM
CPC分类号： G03F1/36 , G03F1/70 , G03F7/70441 , G03F7/705
摘要： An optical proximity correction (OPC) method includes generating a mask layout for target patterns on a wafer, dividing edges of the mask layout into fragments, generating a rotated mask layout by rotating the mask layout at a predetermined angle, extracting a contour of a target pattern by inputting data on the fragments of the rotated mask layout to an OPC model, calculating an edge placement error (EPE) for each fragment, determining whether to re-perform the extracting of the contour of the target pattern, calculating displacements of the fragments when it is determined that the extracting of the contour of the target pattern is re-performed, and moving the fragments by the displacements.
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公开(公告)号：US20240184196A1
公开(公告)日：2024-06-06
申请号：US18342319
申请日：2023-06-27
发明人： Zhenbin WANG
IPC分类号： G03F1/36 , G06F30/398
CPC分类号： G03F1/36 , G06F30/398
摘要： The present application discloses a method for optimizing OPC lithography model parameters. Preliminary suboptimal parameter combinations in proximity to a plurality of local minima of a lens beam focus BF and defocus start DS are quickly found by means of a random direction search method; and then an optimal parameter combination of the lens beam focus BF and defocus start DS is finally obtained on the basis of the suboptimal parameter combinations by means of a precise search method. An optimal parameter solution can be found quickly by combining the random direction search method and the precise search method, without artificially configuring an initial search point. Moreover, the algorithm has a high convergence rate and strong robustness, and can quickly and precisely obtain parameters such as the lens beam focus BF and defocus start DS in modeling of an OPC lithography model.
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