- 专利标题: Methods for acquiring planar view stem images of device structures
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申请号: US15984581申请日: 2018-05-21
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公开(公告)号: US10410829B1公开(公告)日: 2019-09-10
- 发明人: Jamie C. Porter , Scott M. Williams , Clint R. Davlin , Joel B. LeBret
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: TraskBritt
- 主分类号: H01J37/305
- IPC分类号: H01J37/305 ; H01J37/285 ; H01J37/28
摘要:
A method of preparing a sample of a semiconductor device that includes placing a wafer on a support surface, milling an initial lamella within the wafer using a focused ion beam, lifting the initial lamella out of the wafer, placing the initial lamella on an upper surface of the wafer on a lateral side of the initial lamella, milling a planar lamella out of a portion of the initial lamella and the wafer beneath the initial lamella, lifting the planar lamella out of the wafer; and placing the planar lamella on a carbon grid. A method further includes milling a window within an upper portion of the initial lamella exposing internal structures of the initial lamella; and based at least partially on the exposed internal structures of the initial lamella, aligning the initial lamella on the upper surface of the wafer.
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