Invention Grant
- Patent Title: Creating arbitrary patterns on a 2-D uniform grid VCSEL array
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Application No.: US16180041Application Date: 2018-11-05
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Publication No.: US10411437B2Publication Date: 2019-09-10
- Inventor: Chin Han Lin , Weiping Li , Xiaofeng Fan
- Applicant: APPLE INC.
- Applicant Address: US CA Cupertino
- Assignee: APPLE INC.
- Current Assignee: APPLE INC.
- Current Assignee Address: US CA Cupertino
- Agency: Kligler & Associates
- Main IPC: H01S5/183
- IPC: H01S5/183 ; H01L29/15 ; H01S5/026 ; H01S5/187 ; H01S5/42 ; H01S5/042 ; H01S5/20

Abstract:
An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.
Public/Granted literature
- US20190089128A1 Creating arbitrary patterns on a 2-D uniform grid VCSEL array Public/Granted day:2019-03-21
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