- 专利标题: Semiconductor device having interconnection structure
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申请号: US15857961申请日: 2017-12-29
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公开(公告)号: US10418278B2公开(公告)日: 2019-09-17
- 发明人: Dohyun Lee , Youngwoo Park , Junghoon Park , Jaeduk Lee
- 申请人: Dohyun Lee , Youngwoo Park , Junghoon Park , Jaeduk Lee
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2015-0096024 20150706
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/768 ; H01L27/1157 ; H01L27/11582 ; H01L23/522 ; H01L23/532 ; H01L27/11573 ; H01L27/11575 ; H01L23/528
摘要:
A semiconductor device includes a semiconductor pattern on a semiconductor substrate, a three-dimensional memory array on the semiconductor pattern, and a peripheral interconnection structure between the semiconductor pattern and the semiconductor substrate. The peripheral interconnection structure includes an upper interconnection structure on a lower interconnection structure. The upper interconnection structure includes an upper interconnection and an upper barrier layer. The lower interconnection structure includes a lower interconnection and a lower barrier layer. The upper barrier layer is under a bottom surface of the upper interconnection and does not cover side surfaces of the upper interconnection. The lower barrier layer is under a bottom surface of the lower interconnection and covers side surfaces of the lower interconnection.
公开/授权文献
- US20180122695A1 SEMICONDUCTOR DEVICE HAVING INTERCONNECTION STRUCTURE 公开/授权日:2018-05-03
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