A vertical memory device includes a plurality of stacked structures, at least one inter-structure layer, and a channel structure. The plurality of stacked structures comprises a plurality of gate electrodes and a plurality of insulation film patterns that are alternately and repeatedly stacked on a substrate. At least one inter-structure layer is positioned between the two stacked structures adjacent to each other from among the plurality of stacked structures. A channel structure penetrates the plurality of stacked structures and the at least one inter-structure layer, the channel structure extending in the first direction, the channel structure being connected to the substrate.