Invention Grant
- Patent Title: Semiconductor devices including field effect transistors and methods of forming the same
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Application No.: US15591405Application Date: 2017-05-10
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Publication No.: US10418448B2Publication Date: 2019-09-17
- Inventor: Mirco Cantoro , Zhenhua Wu , Krishna Bhuwalka , Sangsu Kim , Shigenobu Maeda
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2014-0159871 20141117
- Main IPC: H01L29/267
- IPC: H01L29/267 ; H01L27/092 ; H01L27/088 ; H01L29/10 ; H01L29/16 ; H01L29/165 ; H01L21/8234 ; H01L21/8238 ; H01L21/02 ; H01L29/06

Abstract:
A semiconductor device includes an active pattern provided on a substrate and a gate electrode crossing over the active pattern. The active pattern includes a first buffer pattern on the substrate, a channel pattern on the first buffer pattern, a doped pattern between the first buffer pattern and the channel pattern, and a second buffer pattern between the doped pattern and the channel pattern. The doped pattern includes graphene injected with an impurity.
Public/Granted literature
- US20170243942A1 SEMICONDUCTOR DEVICES INCLUDING FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME Public/Granted day:2017-08-24
Information query
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