Invention Grant
- Patent Title: Thin film transistor and method of manufacturing the same, and display device
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Application No.: US15660342Application Date: 2017-07-26
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Publication No.: US10418489B2Publication Date: 2019-09-17
- Inventor: Shan Gao , Tingliang Liu , Yang Wang , Wei Guo
- Applicant: BOE Technology Group Co., Ltd. , Chengdu BOE Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Beijing CN Chengdu
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing CN Chengdu
- Agency: Westman, Champlin & Koehler, P.A.
- Priority: CN201610729830 20160825
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L27/12 ; H01L29/66 ; H01L29/786 ; C09K5/16 ; G02F1/1343 ; G02F1/1368

Abstract:
Embodiments of the present disclosure provide a thin film transistor and a method of manufacturing the same, and a display device. In an embodiment, the thin film transistor includes a gate, a gate insulation layer, an active layer, a source electrode and a drain electrode, and further includes a heat source disposed above or below the active layer and configured to heat a channel region of the active layer.
Public/Granted literature
- US20180061991A1 Thin Film Transistor And Method of Manufacturing the Same, And Display Device Public/Granted day:2018-03-01
Information query
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