Invention Grant
- Patent Title: Priming material for substrate coating
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Application No.: US14791877Application Date: 2015-07-06
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Publication No.: US10421867B2Publication Date: 2019-09-24
- Inventor: Chen-Yu Liu , Ching-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: B05D3/12
- IPC: B05D3/12 ; C09D5/00 ; H01L21/027 ; H01L21/67 ; G03F7/16 ; H01L21/02 ; B05D3/10 ; B05D7/00 ; B05D1/00

Abstract:
A coating technique and a priming material are provided. In an exemplary embodiment, the coating technique includes receiving a substrate and identifying a material of the substrate upon which a layer is to be formed. A priming material is dispensed on the material of the substrate, and a film-forming material is applied to the priming material. The priming material includes a molecule containing a first group based on an attribute of the substrate material and a second group based on an attribute of the film-forming material. Suitable attributes of the substrate material and the film-forming material include water affinity and degree of polarity and the first and second groups may be selected to have a water affinity or degree of polarity that corresponds to that of the substrate material and the film-forming material, respectively.
Public/Granted literature
- US20160276151A1 Priming Material for Substrate Coating Public/Granted day:2016-09-22
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