- Patent Title: Method for calculating the metrics of an IC manufacturing process
-
Application No.: US15310709Application Date: 2015-06-02
-
Publication No.: US10423074B2Publication Date: 2019-09-24
- Inventor: Mohamed Saïb , Aurélien Fay , Patrick Schiavone , Thiago Figueiro
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ASELTA NANOGRAPHICS
- Applicant Address: FR Grenoble FR Paris
- Assignee: ASELTA NANOGRAPHICS,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: ASELTA NANOGRAPHICS,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Grenoble FR Paris
- Agency: Baker & Hostetler LLP
- Priority: EP14305834 20140603
- International Application: PCT/EP2015/062301 WO 20150602
- International Announcement: WO2015/185576 WO 20151210
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F7/20 ; G03F1/36 ; G03F1/80 ; H01J37/317

Abstract:
A method for calculating the parameters of a resist model of an IC manufacturing process is provided. Accordingly, a function representative of the target design convoluted throughout the whole target design with a kernel function compounded with a deformation function with a shift angle. The deformation function is replaced by its Fourier series development, the order of which is selected so that the product of convolution is invariant through rotations within a tolerance of the corrections to be applied to the target design. Alternatively, the product of convolution may be decomposed into basic kernel functions selected varying by angles determined so that a deformation function for a value of the shift angle can be projected onto a couple of basic kernel functions the angles of which are proximate to the shift angle.
Public/Granted literature
- US20170123322A1 METHOD FOR CALCULATING THE METRICS OF AN IC MANUFACTURING PROCESS Public/Granted day:2017-05-04
Information query