Invention Grant
- Patent Title: Semiconductor structure and fabrication method thereof
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Application No.: US15863480Application Date: 2018-01-05
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Publication No.: US10424662B2Publication Date: 2019-09-24
- Inventor: Fei Zhou
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201710011800 20170106
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/78 ; H01L29/66 ; H01L29/40 ; H01L29/06 ; H01L27/092 ; H01L27/088 ; H01L21/8238
Abstract:
Semiconductor structures and fabrication methods thereof are provided. An exemplary semiconductor structure includes a base substrate having a first well and a second well region; a first insulation layer over the base substrate and dividing the second well region into a first region adjacent to the first well region, a second region away from the first well region and a third region under the first insulation layer; a gate structure over the base substrate in the first well region and the first region of the second well region; a first mask gate structure on a portion of the second region adjacent to the first region; a first stress layer on the first well region at a side of gate structure away from the first insulation layer; and a second stress layer on the second well regions at a side of the mask gate structure away from the isolation layer.
Public/Granted literature
- US20180197987A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2018-07-12
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