Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16017181Application Date: 2018-06-25
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Publication No.: US10431318B2Publication Date: 2019-10-01
- Inventor: Masayuki Sakakura , Yuugo Goto , Hiroyuki Miyake , Daisuke Kurosaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2011-222990 20111007
- Main IPC: G11C19/18
- IPC: G11C19/18 ; H01L27/12 ; H01L27/02

Abstract:
A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.
Public/Granted literature
- US20180308558A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-10-25
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