Invention Grant
- Patent Title: RF amplifier output circuit device with integrated current path, and methods of manufacture thereof
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Application No.: US14919990Application Date: 2015-10-22
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Publication No.: US10432152B2Publication Date: 2019-10-01
- Inventor: Michael E. Watts , Jeffrey K. Jones , Ning Zhu , Iouri Volokhine
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Sherry W. Schumm
- Priority: WOPCT/IB2015/000963 20150522
- Main IPC: H03F1/56
- IPC: H03F1/56 ; H03F3/195 ; H01G4/30 ; H01G4/38 ; H01L23/66 ; H01F27/28 ; H01G4/005 ; H01G4/12 ; H03F3/213 ; H03H7/38 ; H05K1/11 ; H01L23/00 ; H01G4/40

Abstract:
A device includes multiple ceramic capacitors and a current path structure. A first ceramic capacitor includes a first ceramic material between first and second electrodes. A second ceramic capacitor includes a second ceramic material between third and fourth electrodes. The second ceramic material has a higher Q than the first ceramic material. The current path structure includes a lateral conductor located between the first and second ceramic materials, and first and second vertical conductors that extend from first and second ends of the lateral conductor to a device surface. The device may be coupled to a substrate of a packaged RF amplifier device, which also includes a transistor. For example, the device may form a portion of an output impedance matching circuit coupled between a current carrying terminal of the transistor and an output lead of the RF amplifier device.
Public/Granted literature
- US20160344353A1 RF AMPLIFIER OUTPUT CIRCUIT DEVICE WITH INTEGRATED CURRENT PATH, AND METHODS OF MANUFACTURE THEREOF Public/Granted day:2016-11-24
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