Error detection or correction of a portion of a codeword in a memory device

Invention Grant

US10432230B2 Error detection or correction of a portion of a codeword in a memory device 有权

Patent Title: Error detection or correction of a portion of a codeword in a memory device
Application No.: US13959308

Application Date: 2013-08-05
Publication No.: US10432230B2

Publication Date: 2019-10-01
Inventor: Christopher Bueb , Sean Eilert
Applicant: MICRON TECHNOLOGY, INC.
Applicant Address: US ID Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US ID Boise
Agency: Brooks, Cameron & Huebsch, PLLC
Main IPC: H03M13/29
IPC: H03M13/29 ; H03M13/09

Abstract:

Example embodiments described herein may relate error detection and correction on a portion of a codeword in a memory device.

Public/Granted literature

Information query

Espacenet

IPC分类:

H	电学
H03	基本电子电路
H03M	一般编码、译码或代码转换（用射流方法入F15C4/00；光学模/数转换器入G02F7/00；专用于特殊应用的编码、译码或代码转换见有关小类，例如G01D，G01R，G06F，G06T，G09G，G10L，G11B，G11C，H04B，H04L，H04M，H04N；专用于密码技术或涉及需要保密的其他目的的编码或译码入G09C）
H03M13/00	用于检错或纠错的编码、译码或代码转换；编码理论基本假设；编码约束；误差概率估计方法；信道模型；代码的模拟或测试（用于模/数，数/模或代码转换的检错或纠错入H03M1/00至H03M11/00；专用于数字计算机的入G06F11/08；用于基于记录载体和传感器之间相对运动的信息存储器入G11B，例如G11B20/18；用于静态存储器的入G11C）
H03M13/29	.合并两个或多个代码或代码结构，例如乘积码、广义乘积码、链接码、内层码和外层码