Invention Grant
- Patent Title: Dual conversion gain high dynamic range image sensor readout circuit memory storage structure
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Application No.: US15872741Application Date: 2018-01-16
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Publication No.: US10432879B2Publication Date: 2019-10-01
- Inventor: Chun-Hsiang Chang , Yingkan Lin , Jingwei Lai , Zhe Gao
- Applicant: OmniVision Technologies, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Christensen O'Connor Johnson Kindness PLLC
- Main IPC: H04N5/355
- IPC: H04N5/355 ; H04N5/235 ; H04N5/378

Abstract:
A readout circuit includes a comparator coupled to receive a ramp signal an output of a dual conversion gain pixel. A single counter is coupled to the output of the comparator. The counter is coupled to write to only one of a first or a second memory circuits at a time. A first multiplexor is coupled to load either an initial value or an initial memory value from the first memory circuit into the counter. A second multiplexor is coupled to load either a low conversion gain memory value from the first memory circuit or a high conversion gain memory value from the second memory circuit into a single data transmitter, which is coupled to transmit the received memory value to a digital processor.
Public/Granted literature
- US20190222780A1 DUAL CONVERSION GAIN HIGH DYNAMIC RANGE IMAGE SENSOR READOUT CIRCUIT MEMORY STORAGE STRUCTURE Public/Granted day:2019-07-18
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