Invention Grant
- Patent Title: Method of fabricating contact hole
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Application No.: US16003126Application Date: 2018-06-08
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Publication No.: US10438842B2Publication Date: 2019-10-08
- Inventor: Feng-Yi Chang , Shih-Fang Tzou , Fu-Che Lee , Hsin-Yu Chiang , Yu-Ching Chen
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Ingtegrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Ingtegrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201711470650 20171229
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L21/311

Abstract:
A method of fabricating a contact hole includes the steps of providing a conductive line, a mask layer covering and contacting the conductive line, a high-k dielectric layer covering and contacting the mask layer, and a first silicon oxide layer covering and contacting the high-k dielectric layer, wherein the high-k dielectric layer includes a first metal oxide layer, a second metal oxide layer and a third metal oxide layer stacked from bottom to top. A dry etching process is performed to etch the first silicon oxide layer, the high-k dielectric layer, and the mask layer to expose the conductive line and form a contact hole. Finally, a wet etching process is performed to etch the first silicon oxide layer, the third metal oxide layer and the second metal oxide layer to widen the contact hole, and the first metal oxide layer remains after the wet etching process.
Public/Granted literature
- US20190206724A1 METHOD OF FABRICATING CONTACT HOLE Public/Granted day:2019-07-04
Information query
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