Invention Grant
- Patent Title: Semiconductor device, electronic circuit having the same, and semiconductor device forming method
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Application No.: US15858529Application Date: 2017-12-29
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Publication No.: US10446485B2Publication Date: 2019-10-15
- Inventor: Shinichi Uchida
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn I.P. Law Group, PLLC.
- Priority: JP2017-076933 20170407
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L49/02 ; H01L23/58
Abstract:
A semiconductor device includes: a plurality of first wires formed in a first layer and indicating fixed potentials; and an inductor formed in a second layer stacked on the first layer, and wiring widths of the first wires located within a range of a formation region of the inductor in a plan view among the plurality of first wires are formed narrower than wiring widths of the first wires located outside the range of the formation region of the inductor.
Public/Granted literature
- US20180294221A1 SEMICONDUCTOR DEVICE, ELECTRONIC CIRCUIT HAVING THE SAME, AND SEMICONDUCTOR DEVICE FORMING METHOD Public/Granted day:2018-10-11
Information query
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