Invention Grant
- Patent Title: Cobalt silicidation process for substrates comprised with a silicon-germanium layer
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Application No.: US15613778Application Date: 2017-06-05
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Publication No.: US10446646B2Publication Date: 2019-10-15
- Inventor: Chien-Chao Huang , Yee-Chia Yeo , Chao-Hsiung Wang , Chun-Chieh Lin , Chenming Hu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Priority: TW92116010A 20030612
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/265 ; H01L21/28 ; H01L21/285 ; H01L21/8238 ; H01L29/66 ; H01L29/78 ; H01L21/02
Abstract:
A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming source and drain regions in the semiconductor substrate on both sides of the gate structure, removing at least a portion of the semiconductor alloy layer overlying the source and drain regions, and forming a metal silicide region over the source and drain regions.
Public/Granted literature
- US20170271449A1 Cobalt Silicidation Process for Substrates Comprised with a Silicon-Germanium Layer Public/Granted day:2017-09-21
Information query
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