Invention Grant
- Patent Title: Methods, apparatus and system for forming sigma shaped source/drain lattice
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Application No.: US15702278Application Date: 2017-09-12
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Publication No.: US10446683B2Publication Date: 2019-10-15
- Inventor: Xusheng Wu , Hong Yu
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66

Abstract:
At least one method, apparatus and system disclosed herein involves forming a sigma shaped source/drain lattice. A fin is formed on a semiconductor substrate. A gate region is formed over the fin. In a source region and a drain region adjacent bottom portions of the fin, a first recess cavity is formed in the source region, and a second recess cavity is formed in the drain region. The first and second recess cavities comprise sidewalls formed in an angle relative to a vertical axis. Portions of the first and second recess cavities extend below the fin. In the first recess cavity, a first rare earth oxide layer is formed, and in the second recess cavity, a second rare earth oxide layer is formed.
Public/Granted literature
- US20190081175A1 METHODS, APPARATUS AND SYSTEM FOR FORMING SIGMA SHAPED SOURCE/DRAIN LATTICE Public/Granted day:2019-03-14
Information query
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